- 您现在的位置：买卖IC网 > Sheet目录513 > SI7440DP-T1-GE3 (Vishay Siliconix)MOSFET N-CH D-S 30V PPAK 8SOIC
Si7440DP
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.0
3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ±20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55°C
V DS ≥ 5 V, V GS = 10 V
40
± 100
1
5
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 21 A
V GS = 4.5 V, I D = 19 A
V DS = 15 V, I D = 21 A
0.0053
0.0065
65
0.0065
0.008
Ω
S
Diode Forward Voltage
a
V SD
I S = 4.3 A, V GS = 0 V
0.72
1.2
V
Dynamic b
Total Gate Charge
Q g
29.0
35
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = 15 V, V GS = 4.5 V, I D = 21 A
10.5
10.0
nC
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
R g
t d(on)
t r
t d(off)
t f
t rr
V DD = 15 V, R L = 15 Ω
I D ? 1.0 A, V GEN = 10 V, R g = 6 Ω
I F = 4.3 A, dI/dt = 100 A/μs
0.5
1.4
18
16
75
41
50
2.2
28
25
180
65
80
Ω
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
60
50
40
30
20
V GS = 10 V thru 4 V
3V
50
40
30
20
T C = 125 °C
10
0
10
0
25 °C
- 55 °C
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71623
S09-0270-Rev. D, 16-Feb-09
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI7447ADP-T1-GE3
MOSFET P-CH 30V 35A PPAK 1212-8
SI7454CDP-T1-GE3
MOSFET N-CH 100V 8-SOIC
SI7455DP-T1-GE3
MOSFET P-CH D-S 80V PPAK 8SOIC
SI7456DP-T1-GE3
MOSFET N-CH 100V 5.7A PPAK 8SOIC
SI7457DP-T1-GE3
MOSFET P-CH D-S 100V PPAK 8SOIC
SI7460DP-T1-GE3
MOSFET N-CH 60V 11A PPAK 8SOIC
SI7461DP-T1-GE3
MOSFET P-CH 60V 8.6A PPAK 8SOIC
SI7462DP-T1-GE3
MOSFET N-CH D-S 200V 8-SOIC
相关代理商/技术参数
SI7444DP-T1-E3
功能描述:MOSFET 40V 23.6A 1.9W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7444DP-T1-GE3
功能描述:MOSFET 40V 23.6A 5.4W 6.1mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7445DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
SI7445DP-T1
功能描述:MOSFET 20V 19A 5.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7445DP-T1-E3
功能描述:MOSFET 20V 19A 5.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7445DP-T1-E3
制造商:Vishay Siliconix 功能描述:MOSFET
SI7445DP-T1-GE3
功能描述:MOSFET 20V 19A 5.4W 7.7mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7446BDP-T1-E3
功能描述:MOSFET 30V 19A 1.9W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube